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| Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1624 DESCRIPTION With TO-3PN package Complement to type 2SD2493 APPLICATIONS Audio ,regulator and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage PARAMETER CONDITIONS ANG INCH Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Collector-emitter voltage EMIC ES Open base Open collector TC=25ae Open emitter DUC ON VALUE -110 TOR UNIT V V V A A W ae ae -110 -5 -6 -1 60 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-30mA ;IB=0 IC=-5A ;IB=-5mA IC=-5A ;IB=-5mA VCB=-110V; IE=0 VEB=-5V; IC=0 IC=-5A ; VCE=-4V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-12V 5000 110 MIN -110 TYP. 2SB1624 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE Cob fT MAX UNIT V -2.5 -3.0 -100 -100 |I |I V V A A pF MHz Switching times ton ts tf Fall time ANG Y 15000-30000 Turn-on time Storage time INCH P SEM E IC=-5A;RL=6| IB1=- IB2=-5mA VCC=-30V OND IC TOR UC 100 1.1 3.2 1.1 |I |I |I s s s hFE Classifications O 5000-12000 6500-20000 2 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors PACKAGE OUTLINE 2SB1624 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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